About Us

Expierenced Radar Team since 2009


CHUHANG Technology GmbH offers customized solutions in the field of radar for the automotive, medical, security & traffic surveillance industries. Our team develops, implements, and delivers highly customizable products tailored to the specific needs of businesses and academic institutions. From state-of-the-art transceiver chips to sophisticated products for niche markets with high profit margins – we provide a complete solution that meets the demands of our customers.


Erfahrenes Radar-Team seit 2009


CHUHANG Technology GmbH bietet maßgeschneiderte Lösungen im Bereich Radar für die Automobil-, Medizin-, Sicherheits- und Verkehrsurveillance-Industrien. Unser Team entwickelt, implementiert und liefert hochgradig anpassbare Produkte, die auf die spezifischen Bedürfnisse von Unternehmen und akademischen Institutionen zugeschnitten sind. Von hochmodernen Transceiver-Chips bis hin zu ausgereiften Produkten für Nischenmärkte mit hohen Gewinnmargen – wir bieten eine vollständige Lösung, die den Anforderungen unserer Kunden gerecht wird.

Mehr erfahren
 Part of Our Radar Memories Presented in Pictures/ Hier stellen wir unsere schöne Radar-Erinnerung in Bildern vor.

Publication/Veröffentlichung

[1] W. Zhang, M. Wang, N. Li, Y. Liu, D. Dong, J. Qi, C. Wang, W. Li, L. Wang, D. Wang, J. Yao, C. Li, Q. Wang, Y. Fang, G. Yu, J. Yu, E. Kasper, "Design of a Four-Chip-Cascaded 80-GHz Single-Board 4D Millimeter-Wave Radar for Highway Traffic Surveillance," IEEE MTT-S, International Wireless Symposium (IWS2025), pp.1-3，May 2025.

[2] Y. Li, W. Xia, L. Zhu, J. Zhou, Y. Chu, W. Zhang, Jie Zhang, "Performance Degradation of DOA Estimation in Distributed Radar Networks Under Near-Field Influence," in IEEE Transactions on Radar Systems, vol. 2, pp. 1148-1159, 2024, doi: 10.1109/TRS.2024.3493037.

[3] W. Zhang, A. Palffy, S. Baratam, B. Szekeres, N. Li, and E. Kasper, "Design and Verification of a Two-Chip-Cascaded 4D mm-Wave Imaging Radar for Indoor SLAM," 2024 21st European Radar Conference (EuRAD), Paris/ France, 2024, pp. 180-183.

[4] W. Zhang, N. Li, C. Li, D. Dong, C. Wang, and E. Kasper, "A Two-Chip-Cascaded 4D Millimeter-Wave Imaging Radar Aiming for Automotive SLAM," 2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM), Hong Kong, 2024, pp. 252-254, doi: 10.1109/GSMM61775.2024.10553198 (BEST PAPER AWARD).

[5] W. Zhang, N. Koch, R. Reuter, Y. Liu, A. Sathyanarayana, H. Kolsi, S. Siddiqui, C. Culver, C. Davis, N. Li, W. Li, L. Wang, C. Wang, J. Zheng, F. Yang, "A Unified 77/79GHz Low-Profile Digital Code Modulation (DCM) Automotive Radar Aiming at Mass Production," IEEE MTT-S, International Wireless Symposium (IWS2024), pp.1-3，May 2024.

[6] Y. Li, P. Cao, W. Xia, J. Zhou, Y. Chu, W. Zhang, J. Zhang, "Radar High-Speed Target Range-Doppler-Azimuth Coherent Extension Detection for Autonomous Vehicles," in IEEE Sensors Journal, vol. 24, no. 21, pp. 34733-34743, 01. Nov. 2024.

[7] Y. Li, W. Xia, Y. Chu, W. Zhang, J. Zhang, "High Performance Sparse Forward-Looking Imaging of Distributed Millimeter-Wave Radar," IEEE Transactions on Vehicular Technology, vol. 73, no. 4, pp. 5089-5099, 27. April 2024.

[8] W. Zhang, N. Li, D. Wang, J. Yao, L. Wang, W. Li, M. Li, W. Winkler, J. Yu, E. Kasper, “A Compact Commercialization-Aimed 120 GHz Radar Module for Vital Sign Detection,” IEEE MTT-S, APS, ANT, 10th Asia-Pacific Conference on Antennas and Propagation (APCAP), pp.1-2，Nov. 2022.

[9] W. Zhang, N. Li, L. Wang, D. Dong, J. Zhang, J. Yu, E. Kasper, “Design and Characterization of a Patch Antenna Integrated in a 77 GHz Automotive Radar for Parking Assistant Application,” CIE，IEEE, 13th International Symposium on Antennas, Propagation and EM Theory (ISAPE), pp.1-3，Dec. 2021.

[10] W. Zhang, N. Li, H. Zha, J. Zhang, X. Li, J. Yu, E. Kasper, “ A Software-Adaptive 77 GHz Radar Sensor for Traffic Applications,” IEEE MTT-S, International Wireless Symposium (IWS), pp.1-3，May 2021.

[11] W. Zhang, N. Li, J. Yu, and E. Kasper, " A Compact Single-Board Solution for Commercializing Cost-Effective 77 GHz Automotive Front Radar," IEEE MTT-S, Asia-Pacific Microwave Conference (APMC), pp.1098-1100, Dec. 2020.

[12] W. Zhang, N. Li, Y. Wei, D. Dong, X. Li, J. Yu, and E. Kasper, "Design and verification of a compact single-board solution for commercializing cost-effective 77 GHz automotive front radar," IET International Radar Conference (IET IRC 2020), 2020, pp. 248-252, doi: 10.1049/icp.2021.0492.

[13] W. Zhang, N. Li, Z. Zheng, L. Shi, J. Yu, and E. Kasper, " Passive and Active Verification of Serial-Fed Patch Antenna Array for 77 GHz Automotive Corner Radar," IEEE MTT-S, International Wireless Symposium (IWS), pp. 1-3, Sep. 2020.

[14] W. Zhang, J. Yu, J. Schulze, and E. Kasper, " Improvement of Thermal Endurance for Integrated Millimeter-Wave Silicon IMPATT Device in Micrometer-Square-Scale," IEEE MTT-S, International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP 2020), pp. 1-4, July 2020.

[15] W. Zhang, N. Li, E. Kasper, Z. Zheng, and L. Shi, " Impact Analysis of High-Frequency Material and PCB Fabrication Technology on Antenna Design for 77/79 GHz Automotive Radar," IEEE MTT-S, Asia-Pacific Microwave Conference (APMC), pp.756-758, Dec. 2019.

[16] W. Zhang, E. Kasper, and J. Schulze, "A Monolithically Integrated 80-GHz Full-Wave Rectenna With Silicon Schottky Diodes Under MOTT Operation," IEEE MTT-S, International Wireless Symposium (IWS), pp. 1-4, May 2019, FLASH Competition Best Paper Award.

[17] W.Zhang, E. Kasper, and J. Schulze, "An 82-GHz 14.6-mW Output Power Silicon Impact Ionization Avalanche Transit Time Transmitter With Monolithically Integrated Coplanar Waveguide Patch Antenna," IEEE Transactions on Microwave Theory and Techniques (T-MTT), vol. 67, no. 1, pp. 308-317, Jan. 2019.

[18] W. Zhang, M. Oehme, K. Matthies, V. Stefani, A. I. Raju, E. Kasper, and J. Schulze, "Small-signal IMPATT diode characterization for millimeter-wave power applications in monolithic scenarios," 46th European Solid-State Device Research Conference (ESSDERC) Proceedings, pp. 109-112, Sep. 2016.

[19] W. Zhang, M. Oehme, K. Kostecki, K. Matthies, V. Stefani, A. I. Raju, D. Noll, V.S. S. Srinivasan, R. Körner, E. Kasper, and J. Schulze, "S-parameter based device-level C-V measurement of p-i-n single-drift IMPATT diode for millimeter-wave applications," IEEE MTT-S, International Wireless Symposium (IWS), pp. 1-4, Mar. 2016.

[20] W. Zhang, Y. Yamamoto, M. Oehme, K. Matthies, A. I. Raju, V.S. S. Srinivasan, R. Körner, M. Gollhofer, S. Bechler, H. Funk, B. Tillack, E. Kasper, and J. Schulze, "S-parameter characterization and lumped-element modelling of millimeter-wave single-drift impact-ionization avalanche transit-time diode," Japanese Journal of Applied Physics (JJAP), vol. 55, no. 4S, pp. 04EF03:1-6, Mar. 2016.

[21] W. Zhang and Y. Yamamoto, M. Oehme, K. Matthies, B. Tillack, E. Kasper, and J. Schulze, "S-parameter characterization and lumped-element modelling of mm-wave single-drift IMPATT diode," Japan Society of Applied Physics, 47th International Conference on Solid State Devices and Materials (SSDM), E-7-4, pp. 802-803, Sep. 2015.

[22] W. Zhang, M. Oheme, K. Kostecki, K. Matthies, V. Stefani, E. Kasper, and J. Schulze, "Systematic characterization of silicon IMPATT diode for monolithic E-band amplifier design," German Microwave Conference (GeMiC), pp. 135-138, Mar. 2015.

[23] W. Zhang and E. Kasper, M. Oehme, M. Kaschel, V. Stefani, and J. Schulze, "A monolithic integrated 85 GHz schottky rectenna with dynamic tuning range of the conversion voltage," IEEE MTT-S, International Symposium on Radio-Frequency Integration Technology (RFIT), TH1A-2, pp. 1-3, Aug. 2014.

[24] W. Zhang, K. Ye, S. Bechler, K. Ulbricht, M. Oehme, E. Kasper, and J. Schulze, "A reliable 40 GHz opto-electrical system for characterization of frequency response of Ge PIN photo detectors," International Silicon-Germanium Technology and Device Meeting (ISTDM), pp. 117-118, Jun. 2014.

[25] W. Zhang, M. Kaynak, M. Wietstruck, V. Mühlhaus, and B. Tillack, "EM and lumped-element model of BiCMOS embedded capacitive RF-MEMS switch," German Microwave Conference (GeMiC), pp. 1-4, Mar. 2012.

[26] K. Ye, W. Zhang, M. Oehme, M. Schmid, M. Gollhofer, K. Kostecki, D. Widmann, R. Körner, E. Kasper, and J. Schulze, "Absorption coefficients of GeSn extracted from PIN photodetector response," Solid-State Electronics, vol. 110, pp. 71-75, Feb. 2015.

[27] E. Kasper, W. Zhang, "SIMMWIC integration of millimeter-wave antenna with two terminal devices for medical applications," IEEE, Silicon Monolithic Integrated Circuits in RF Systems (SiRF), pp.1-3, Jan. 2015.

[28] E. Kasper, W. Zhang, Chapter 11: Device Operation as Crystal Quality Probe of Silicon; Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals, CRC Press, pp. 353-374, Dec. 2014.

[29] K. Ye, W. Zhang, M. Oehme, M. Schmid, M. Gollhofer, K. Kostecki, D. Widmann, E. Kasper, and J. Schulze, "Extraction of GeSn absorption coefficients from photodetector response," International Silicon-Germanium Technology and Device Meeting (ISTDM), pp. 137-138, Jun. 2014.

[30] M. Wietstruck, M. Kaynak, W. Zhang, and B. Tillack, "Electro-thermal-mechanical analysis of a BiCMOS embedded RF-MEMS switch for temperatures from -55°C to +125°C," IEEE, Silicon Monolithic Integrated Circuits in RF Systems (SiRF) , pp.18-20, Jan. 2013.

[31] M. Kaynak, M. Wietstruck, W. Zhang, J. Drews, R. Barth, D. Knoll, F. Korndörfer, R. Scholz, K. Schulz, C. Wipf, B. Tillack, K. Kaletta, M. v. Suchodoletz, K. Zoschke, M. Wilke, O. Ehrmann, A. C. Ulusoy, T. Purtova, G. Liu, and H. Schumacher, "Packaged BiCMOS embedded RF-MEMS switches with integrated inductive loads," IEEE, International Microwave Symposium (IMS), MTT-S, pp.1-3, Jun. 2012.

[32] M. Kaynak, M. Wietstruck, W. Zhang, J. Drews, R. Scholz, D. Knoll, F. Korndörfer, C. Wipf, K. Schulz, M. Elkhouly, K. Kaletta, M. v. Suchodoletz, K. Zoschke, M. Wilke, O. Ehrmann, V. Mühlhaus, G. Liu, T. Purtova, A. C. Ulusoy, H. Schumacher, and B. Tillack, "RF-MEMS switch module in a 0.25 μm BiCMOS technology," IEEE, Silicon Monolithic Integrated Circuits in RF Systems (SiRF), pp.25-28, Jan. 2012.

[33] M. Kaynak, M. Wietstruck, W. Zhang, J. Drews, D. Knoll, F. Korndörfer, C. Wipf, K. Schulz, M. v. Suchodoletz, K. Zoschke, K. Kaletta, O. Ehrmann, S. Leidich, S. Kurth, and B. Tillack, "MEMS module integration into SiGe BiCMOS technology for embedded system applications," Semiconductor Conference Dresden (SCD), pp.1-4, Sep. 2011.

[34] M. Kaynak, M. Purdy, M. Wietstruck, W. Zhang, and B. Tillack, "A CMOS based fast high-voltage generation circuit for BiCMOS embedded RF-MEMS applications," IEEE, Silicon Monolithic Integrated Circuits in RF Systems (SiRF), pp.21-23, Jan. 2013.

[35] N. T. Matabosch, F. Coccetti, M. Kaynak, W. Zhang, B. Tillack, R. Plana, and J. L. Cazaux, " An accurate and versatile equivalent circuit model for RF-MEMS circuit optimization in BiCMOS technology," European Microwave Integrated Circuits Conference (EuMiC), pp.143-146, Oct. 2012.

[36] M. Gollhofer, M. Oehme, K. Kostecki, K. Ye, S. Bechler, K. Ulbricht, M. Schmid, M. Kaschel, R. Körner, W. Zhang, E. Kasper, and J. Schulze, " High speed vertical GeSn photodiodes on Si," IEEE, International Conference on Group IV Photonics (GFP), pp.19-20, Aug. 2014.

[37] M. Oehme, K. Kostecki, K. Ye, S. Bechler, K. Ulbricht, M. Schmid, M. Kaschel, M. Gollhofer, R. Körner, W. Zhang, E. Kasper, and J. Schulze, "GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz," Optics Express, vol. 22, no. 1, pp. 839-846, Jan. 2014.

[38] R. Körner, D. Schwarz, I. A. Fischer, L. Augel, S. Bechler, L. Hänel, M. Kern, M. Oehme, E. Rolseth, B. Schwartz, D. Weisshaupt, W. Zhang, J. Schulze, "The Zener-Emitter: A Novel Superluminescent Ge Optical Waveguide-Amplifier with 4.7 dB Gain at 92 mA Based on Free-Carrier Modulation by Direct Zener Tunneling Monolithically Integrated on Si," IEEE, 62nd International Electron Device Meeting (IEDM), Dec. 2016, Best Student Paper Award.